2009.9 -- 2013.6  大连理工大学   电子科学与技术    学士

2013.9 -- 2019.2  韩国成均馆大学   纳米科学与技术   博士

•单层石墨烯的化学气相沉积制备方法（CVD）以及石墨烯的掺杂和打开带隙的方法。

•通过等离子体技术对二维黑磷材料的表面进行处理（控制材料厚度，表面粗糙度和化学成分）以实现高性能的场效应晶体管。

•通过化学掺杂、等离子轰击等方法对二维半导体进行改性，调节其载流子类型、浓度，器件开闭比以及载流子迁移率。 • 形成纳米粒子-二维材料异质结光电探测器，实现高灵敏度和高响应率的红外线探测器。

1. Jingyuan Jia, Sumin Jeon,Jaeho Jeon,Jiao Xu,Young Jae Son,Jeong Ho Cho,Byoung Hun Lee,Jin Dong Song,Hyung‐Jun Kim,Euyheon Hwang,Sungjoo Lee.Generalized Scheme for High Performing Photodetectors with ap‐Type 2D Channel Layer and n‐Type Nanoparticles. Small 14.9 (2018): 1703065. （IF=9.598, 一区）

2. Jingyuan Jia, Jiao Xu, Jin-Hong Park, Byoung Hun Lee, Euyheon Hwang,Sungjoo Lee. Multifunctional Homogeneous Lateral Black Phosphorus Junction Devices. Chemistry of Materials 29.7 (2017): 3143-3151. (IF=9.890, 一区)

3. Jingyuan Jia, Sung Kyu Jang, Shen Lai, Jiao Xu, Young Jin Choi, Jin-Hong Park, and Sungjoo Lee. Plasma-treated thickness-controlled two-dimensional black phosphorus and its electronic transport properties. ACS nano 9.9 (2015): 8729-8736. (IF=13.709, 一区)

4. Sumin Jeon,Minwoo Kim,Jingyuan Jia,Jin-Hong Park,Sungjoo Lee,Young Jae Song. Controlled p-doping of black phosphorus by integration of MoS2 nanoparticles. Applied Surface Science, 440, 282-287. (2018) (二区)

5. Jiao Xu,Jingyuan Jia,Shen Lai,Jaehyuk Ju,Sungjoo Lee. Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric. Applied Physics Letters, 110(3), 033103. (2017) (一区)

专利：

韩国专利 “Surface treatment method of 2-dimensional thin layer and method of manufacturing an electric element” Patent number: 10-1884977